Takahiro Mori

Work

National Institute of Advanced Industrial Science and Technology (AIST)

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Researcher

Japan

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National Institute of Advanced Industrial Science and Technology

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Postdoctoral Researcher

Japan

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RIKEN

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Postdoctoral Researcher

Japan

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Education

Tohoku Univeristy

Japan
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Doctor

Tohoku Univerisity

Japan
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Master

Tohoku University

Japan
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Bachelor

Publications

Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

Japanese Journal of Applied Physics

journal-article

Simulation study of short-channel effects of tunnel field-effect transistors

Japanese Journal of Applied Physics

journal-article

Enhancement of capacitance benefit by drain offset structure in tunnel field-effect transistor circuit speed associated with tunneling probability increase

Japanese Journal of Applied Physics

journal-article

Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

Solid-State Electronics

journal-article

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

Mrs Communications

journal-article

On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

Japanese Journal of Applied Physics

journal-article

Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

Japanese Journal of Applied Physics

journal-article

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

Japanese Journal of Applied Physics

journal-article

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Japanese Journal of Applied Physics

journal-article

Bias temperature instability in tunnel field-effect transistors

Japanese Journal of Applied Physics

journal-article

Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

Materials Science in Semiconductor Processing

journal-article

Impact of extension implantation conditions of fin field-effect transistors on gate-induced drain leakage

Japanese Journal of Applied Physics

journal-article

Characterization of Effective Mobility and Its Degradation Mechanism in MoS2 MOSFETs

Ieee Transactions on Nanotechnology

journal-article

Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory

Japanese Journal of Applied Physics

journal-article

Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology

2016 Ieee International Electron Devices Meeting (Iedm)

book-chapter

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Japanese Journal of Applied Physics

journal-article

Study of gate leakage current paths in p-channel tunnel field-effect transistor by current separation measurement and device simulation

Japanese Journal of Applied Physics

journal-article

Characterization of effective mobility by split C-V technique in MoS2 MOSFETs with high-k/metal gate

2015 Ieee 15th International Conference on Nanotechnology (Ieee-Nano)

journal-article

Design guidelines to achieve minimum energy operation for ultra low voltage tunneling FET logic circuits

Japanese Journal of Applied Physics

journal-article

Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

Applied Physics Express

journal-article

Evolution of Nanoscale Silicon CMOS Technology for Ultra Low Power Application

2015 Ieee International Meeting For Future of Electron Devices, Kansai (Imfedk)

journal-article

Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching

Japanese Journal of Applied Physics

journal-article

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

Solid-State Electronics

journal-article

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Solid-State Electronics

journal-article

Modeling of Parallel Electric Field Tunnel FETs

18th International Workshop on Computational Electronics (Iwce 2015)

journal-article

PBTI for N-type Tunnel FinFETs

2015 International Conference on IC Design & Technology (ICICDT)

journal-article

Understanding of BTI for Tunnel FETs

2015 Ieee International Electron Devices Meeting (Iedm)

journal-article

Robust and Compact Key Generator Using Physically Unclonable Function Based on Logic-Transistor-Compatible Poly-Crystalline-Si Channel FinFET Technology

2015 Ieee International Electron Devices Meeting (Iedm)

journal-article

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Applied Physics Letters

journal-article

Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors

Applied Physics Letters

journal-article

Accurate Prediction of PBTI Lifetime for N-type Fin-Channel Tunnel FETs

2014 Ieee International Electron Devices Meeting (Iedm)

book-chapter

Band-to-Band Tunneling Current Enhancement Utilizing Isoelectronic Trap and its Application to TFETs

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

book-chapter

Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Applied Physics Letters

journal-article

Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of less than 60 mV/decade and Very Low (pA/mu m) Off-Current on a Si CMOS Platform

2014 Ieee International Electron Devices Meeting (Iedm)

book-chapter

High-Performance Tri-Gate Poly-Ge Junction-Less P- and N-MOSFETs Fabricated by Flash Lamp Annealing Process

2014 Ieee International Electron Devices Meeting (Iedm)

book-chapter

High-performance poly-Ge short-channel metal-oxide-semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing

Applied Physics Express

journal-article

Improvement of Epitaxial Channel Quality on Heavily Arsenic-and Boron-doped Si surfaces and Impact on Tunnel FET Performance

Proceedings of the 2014 44th European Solid-State Device Research Conference (Essderc 2014)

book-chapter

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Ieee Electron Device Letters

journal-article

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Solid-State Electronics

journal-article

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Applied Physics Express

journal-article

Variation Behavior of Tunnel-FETs Originated from Dopant Concentration at Source Region and Channel Edge Configuration

Proceedings of the 2014 44th European Solid-State Device Research Conference (Essderc 2014)

book-chapter

Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes

Japanese Journal of Applied Physics

journal-article

A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

Journal of Applied Physics

journal-article

Analysis of Threshold Voltage Shifts in Double Gate Tunnel FinFETs: Effects of Improved Electrostatics by Gate Dielectrics and Back Gate Effects

2013 International Symposium on Vlsi Technology, Systems, and Applications

book-chapter

Guidelines for Symmetric Threshold Voltage in Tunnel FinFETs with Single and Dual Metal Gate Electrodes

2013 Proceedings of the European Solid-State Device Research Conference (Essderc)

book-chapter

Performance Limit of Parallel Electric Field Tunnel FET and Improvement by Modified Gate and Channel Configurations

2013 Proceedings of the European Solid-State Device Research Conference (Essderc)

journal-article

First Demonstration of Drain Current Enhancement in SOI Tunnel FET with Vertical-Tunnel-Multiplication

Ieee International Soi Conference

book-chapter

SiO2/Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

Applied Physics Letters

journal-article

Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics-semiconductor interfaces

Thin Solid Films

journal-article

Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Japanese Journal of Applied Physics

journal-article

Raman, nuclear magnetic resonance, and transport characteristics of C-13 enriched single-walled carbon nanotubes

Journal of Nanophotonics

journal-article

Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique

Journal of Vacuum Science & Technology B

journal-article

High-Temperature Operation of Single-Electron Transistors Based on Single-Walled Carbon Nanotubes

Sensors and Materials

journal-article

Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET

2009 9th Ieee Conference on Nanotechnology

book

Coupled Quantum Dots in a Graphene-Based Two-Dimensional Semimetal

Nano Letters

journal-article

Study of local segregation in GaInNAs using EXAFS measurements

Journal of Physics and Chemistry of Solids

journal-article

Charge trapping effects in photovoltage measurements of (Ga,Mn)As

Physica B-Condensed Matter

journal-article

Improved temperature characteristics of single-wall carbon nanotube single electron transistors using carboxymethylcellulose dispersant

Applied Physics Letters

journal-article

Optical properties and thermal stability of GaAsN alloy films

Journal of Luminescence

journal-article

Molecular beam epitaxy and magnetic properties of GaMnNAs

Journal of Crystal Growth

journal-article

Magnetic and crystalline properties of GaMnNAs and low-temperature annealing effect

2006 Conference on Optoelectronic and Microelectronic Materials & Devices

book

Ordering of In and Ga in epitaxially grown In0.53Ga0.47As films on (001)InP substrates

Materials Transactions

journal-article

Experimental demonstration of Fano-type resonance in photoluminescence of ZnS : Mn/SiO2 one-dimensional photonic crystals

Applied Physics Letters

journal-article

GaNAs(001) surface phases under growing condition

Journal of Vacuum Science & Technology B

journal-article

Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001)

Current Applied Physics

journal-article

Surface structure of InGaAs/InP(001) ordered alloy during and after growth

Applied Surface Science

journal-article

Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system

Thin Solid Films

journal-article

Optical anisotropy of GaNAs grown on GaAS(001) substrate

Current Applied Physics

journal-article

Dielectric functions of InxGa1-xAs alloys

Physical Review B

journal-article

Measurements of a component of the piezo-optic tensor of Si by reflectance difference spectroscopy

Journal of Applied Physics

journal-article

Measurements of the linear electro-optic coefficients of ZnTe by RDS

Physica Status Solidi B-Basic Research

journal-article